Part of the Special Joint ECE and NYU WIRELESS Seminar Series
Circuits: Terahertz (THz) and Beyond
Wireless above 100GHz
- Professor of Electrical and Computer Engineering at University of California, Santa Barbara
- Director of Nanofabrication Laboratory at UCSB
With the RF bands below ~5GHz soon to be exhausted, industry is poised to move to 5G systems, with carriers at 28, 38, 57-71(WiGig), and 71-86GHz. Research now explores the next generation of wireless systems, these operating between 100-340GHz. Such systems can support massive spatial multiplexing in both endpoint and backhaul links, and will require high-frequency transistors in VLSI and in III-V technologies, phased-array transceiver front-ends, and complex silicon RF ICs to form and aim multiple beams and to null or equalize multipath interference. We will summarize THz transistor design, IC development from 100-1000 GHz, and array and system design.
Mark Rodwell (Ph.D. Stanford University 1988) holds the Doluca Family Endowed Chair in Electrical and Computer Engineering at UCSB. He directs the SRC/DARPA Center for Converged TeraHertz Communications and Sensing. His research group develops nm and THz transistors, and mm-wave and sub-mm-wave integrated circuits and systems. The work of his group and collaborators has been recognized by the 2010 IEEE Sarnoff Award, the 2012 IEEE Marconi Prize Paper Award, the 1997 IEEE Microwave Prize, the 1998 European Microwave Conference Microwave Prize, and the 2009 IEEE IPRM Conference Award.